Publish In |
International Journal of Industrial Electronics and Electrical Engineering (IJIEEE)-IJIEEE |
Journal Home Volume Issue |
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Issue |
Volume-9,Issue-8 ( Aug, 2021 ) | |||||||||
Paper Title |
TCAD Simulation for TFT using Different Materials | |||||||||
Author Name |
Shrinidhi S Amble, Ramavenkatesh Nagaraj, Ashwini S Rao, Kavya R Hegde, Thanmayram B R, Chethana K | |||||||||
Affilition |
Electronics and Communication Engineering Department, Jyothy Institute of Technology, Bangalore, India Assistant Professor, Electronics and Communication Engineering Department, RV College of Engineering, Bangalore, India Associate Professor, Electronics and Communication Engineering Department, Jyothy Institute of Technology, Bangalore, India | |||||||||
Pages |
15-20 | |||||||||
Abstract |
Thin Film Transistors (TFTs) are a type of MOSFETs made of thin dielectric, semiconductor and substrate layers, and mainly used in display technologies. The properties of the semiconducting material influence the behavior of the TFT, and thus the semiconductor chosen varies according to the application. The semiconductors can be metal oxides, such as Zinc Oxide (ZnO) or Organic semiconductors such as Pentacene. In this paper, we have designed and obtained the Gate Voltage-Drain Current characteristics for different semiconductor materials with the help of Silvaco TCAD simulation software. We have also discussed the future of Thin Film Transistor in electronics industries and their application. | |||||||||
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