DOIONLINE 
DOIONLINE Publish In |
International Journal of Industrial Electronics and Electrical Engineering (IJIEEE)-IJIEEE |
 Journal Home Volume Issue |
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Issue |
Volume-9,Issue-6 ( Jun, 2021 ) | |||||||||
Paper Title |
TCAD Simulation Study of TSV Annealing Effects | |||||||||
Author Name |
Amira Nabil, Mohammed Abouelatta, Ahemd Shaker, Cristian Gontrand, Hani Ragai | |||||||||
Affilition |
Department of Electronics and Communications, New Cairo Academy, Higher Institute for Engineering and Technology, Fifth settlement, Cairo, Egypt. Department of Electronics and Electrical Communications, Faculty of Engineering, Ain Shams University, 11517 Cairo, Egypt. Department of Engineering Physics and Mathematics, Faculty of Engineering, Ain Shams University, 11517 Cairo, Egypt. INL-INSA Lyon, Université de Lyon, 7 avenue Jean Capelle 69621 Villeurbanne, France. 4IEP, INSA- Fès, Univ | |||||||||
Pages |
8-13 | |||||||||
Abstract |
In this work, a study of TSV thermo-mechanical stress behavior is reported using both analytical analysis and Sentaurus TCAD tool. The TSV thermal-mechanical behavior is investigated under different annealing temperatures, radii, liner thicknesses, and different filling material. The phenomenon of Cu protrusion during thermal annealing of a TSV wafer is also presented. Furthermore, the Keep-Out-Zone (KOZ) is determined for all cases. The results indicate that as the annealing temperature increases both the generated stresses and the copper protrusion increase. The simulation results are compared to both experimental and previously simulated results from literature giving a good match. Keywords - Through silicon via; 3D integration; Thermal stresses; Analytical analysis; TCAD simulations. | |||||||||
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