DOIONLINE 
DOIONLINE Publish In |
International Journal of Industrial Electronics and Electrical Engineering (IJIEEE)-IJIEEE |
 Journal Home Volume Issue |
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Issue |
Volume-8,Issue-7 ( Jul, 2020 ) | |||||||||
Paper Title |
Design of Quantum-Well Heterojunction Bipolar Transistor based on Physical Parameters | |||||||||
Author Name |
Hsu Myat Tin Swe, Hla Myo Tun, Myint Myint Than, Maung Maung Latt | |||||||||
Affilition |
Yangon Technological University Technological University (Toungoo) | |||||||||
Pages |
1-5 | |||||||||
Abstract |
The paper mainly focuses on the design of quantum-well Heterojunction Bipolar Transistor based on physical parameters of III-V materials and compound. The analyses have been done with quantum-well band diagram design, the unity beta frequency, rise time, storage delay time, fall time, minority carrier distribution and biasing modes for developed HEBT design by using physical parameters of the III-V compound based quantum well design. The mathematical modeling for proposed HEBT design was completed with the physical parameters. The design was performed the related consideration on quantum-well structure and the analyses was finalized with the help of numerical analysis by using MATLAB. The results confirm that the proposed quantum-well HEBT was observed the high performance condition in semiconductor device fabrications. Keywords - Quantum-Well Structure, Heterojunction Bipolar Transistor, Semiconductor Device Fabrication, Numerical Analysis, MATLAB | |||||||||
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