DOIONLINE 
DOIONLINE Publish In |
International Journal of Industrial Electronics and Electrical Engineering (IJIEEE)-IJIEEE |
 Journal Home Volume Issue |
||||||||
Issue |
Volume-7,Issue-7 ( Jul, 2019 ) | |||||||||
Paper Title |
RRam with Memristive Behaviour for Synaptic Applications | |||||||||
Author Name |
Abheek Kumar | |||||||||
Affilition |
Devi Ahilya Vishwavidyalaya (DAVV), Khandwa Road, Indore, India | |||||||||
Pages |
25-26 | |||||||||
Abstract |
This work reports analytical modelling of resistive switching device, in Matlab environment. The device also shows so called memristive behavior with its’ pinched hysteresis. The device finds applications in neuromorphic systems. The primary aim of this work is to study the effect of change of frequency applied and device thickness upon switching characteristics and investigate memristive properties. Keywords - Memristor, Neuromorphic System, Machine- Learning | |||||||||
| View Paper | ||||||||||
