Publish In |
International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC |
Journal Home Volume Issue |
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Issue |
Volume-8,Issue-5 ( May, 2020 ) | |||||||||
Paper Title |
Synthesis and Electrical Properties of (Ca0.8Sr0.2) ZrO3 Thin Films | |||||||||
Author Name |
Cheng-Hsing Hsu, Po-Yu Chou, Ching-Fang Tseng | |||||||||
Affilition |
Department of Electrical Engineering, National United University, No. 2 Lien-Da, Nan-Shih Li, Miao-Li 36063, Taiwan Department of Electronic Engineering, National United University, No. 2 Lien-Da, Nan-Shih Li, Miao-Li 36063, Taiwan | |||||||||
Pages |
25-28 | |||||||||
Abstract |
This paper describes physical and dielectric properties of (Ca0.8Sr0.2)ZrO3 on n-type Si substrate were fabricated by sol-gel method. Particular attention will be paid to the effects of preheating temperature and annealing temperature on the physical and dielectric properties. The (Ca0.8Sr0.2)ZrO3 films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). The kinetic energies of the deposited atoms increased resulted in a microstructural improvement of the deposited (Ca0.8Sr0.2) ZrO3 thin films with increasing thermal treatments. Keywords - Sol-Gel Method, (Ca0.8Sr0.2) ZrO3 Thin Film, Electrical Properties, Microstructure | |||||||||
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