Publish In |
International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC |
Journal Home Volume Issue |
||||||||
Issue |
Volume-5,Issue-8 ( Aug, 2017 ) | |||||||||
Paper Title |
Study on INGAP/GAAS Collector-up HBTS with the Graphene Base for Power-Amplifier Applications | |||||||||
Author Name |
Wei-Min Du, Hsien-Cheng Tseng | |||||||||
Affilition |
Electronic Engineering, Department Tainan 71003, Taiwan Kun Shan University | |||||||||
Pages |
77-80 | |||||||||
Abstract |
In this work, the characteristics of novel InGaP/GaAs collector-up heterojunction bipolar transistors with the graphene base and the nonuniform doped collector are demonstrated, and performances of the novel HBTs have been compared with the conventional InGaP/GaAs HBTs with various collector structures and thermal schemes. As compared to the conventional HBTs, the studied C-up HBTs exhibited better current-driving capability and higher RF efficiency. Note that the pnp device displayed greater thermal stability enhancement, which are distinct and reproducible, than the n-p-n device. The comparison results, based on pragmatic observations from the C-up HBTs without relatively large heatdissipation configurations, should be very useful for the reliable and the cost-effective design as small-scale power amplifiers in the wideband CDMA (W-CDMA) system. Keywords- Collector-Up, Graphene, Heterojunction Bipolar Transistors, Power Amplifiers, Thermal Stability. | |||||||||
View Paper |