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International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC
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Volume Issue
Volume-4,Issue-5  ( May, 2016 )
Paper Title
Switching Speed Of Cylindrical Surrounding Double-Gate Mosfet For Nanotechnology
Author Name
Viranjay M. Srivastava
Department of Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban - 4041, South Africa
In nanotechnology, the switching devices have a vital role. These switching devices may be of diode, transistor etc. The Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) are better switching device as compared to others. In this present research, switching speed has been analyzed with the help of a proposed model of Cylindrical Surrounding Double-Gate (CSDG) MOSFET. This can be used to select the signal from antennas for transmitting / receiving processes and other applications in nanotechnology sensors with the emphasis on the switching speed. It has the advantages of higher switching speed for the various switching circuit application of nanotechnology and radio-frequency technology compared to the Double-Gate (DG) MOSFET and some other traditional switching devices. The scaling of the device has been taken with care in this analysis. Keywords— CSDG MOSFET, Double-gate MOSFET; Nanotechnology; Nano-devices; Switch model; Switching speed; VLSI.
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