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International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC
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Volume Issue
Volume-10,Issue-7  ( Jul, 2022 )
Paper Title
Comparative Analysis of T-Shaped Tfet Structures for Low Power Applications
Author Name
Raviraj Yadav, Mandeep Singh, Tarun Chaudhary
Abstract - T-shaped channel provides larger tunneling Junction area which provides more number of electrons resulting in enhanced ION current. In this paper we will describe various type of structures like Drain-Engineered TFET (DE-TFET), Silicon-On-Insulator TFET (SOI-TFET), n-type TFET having Tri-input terminals and Silicon doped device with channel in T-shape Double gate TFET (Si-TC-DG-TFET). In these Structures we will describe parameters like ION/IOFF ratio and Subthreshold Swing (SSavg). SSavg of DE-TFET is less than 60 mV/decade whereas for Tri-input terminal it is 47.32 mV/decade, 30 mV/decade for SOI-TFET, and 35 mV/decade for Si-TC-DG-TFET. ION/IOFF ratio of Tri-input terminal is 1767 whereas it is 108 for SOI-TFET, 1012 for DE-TFET and highest 1014 in Si-TC-DG-TFET. Silicon doped T-shaped channel double gate TFET has better ION/IOFF and optimumSSavg, thus it has good application in low power operations. Keywords - Ambipolar, Tunnel FieldEffect Transistor (TFET), Double-gate (DG), T-shaped channel, Band-to-band Tunneling (BTBT)
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