DOIONLINE 
DOIONLINE Publish In |
International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC |
 Journal Home Volume Issue |
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Issue |
Volume-8,Issue-7 ( Jul, 2020 ) | |||||||||
Paper Title |
Design of Power MOSFET based on Physical Parameters | |||||||||
Author Name |
Thee Ei Khaing Shwe, Mya Mya Aye, Myint Myint Than, Win Kay Khaing, Hla Myo Tun | |||||||||
Affilition |
Master Candidate, Yangon Technological University, Gyogone, Insein PO, 11011, Yangon, Myanmar | |||||||||
Pages |
13-15 | |||||||||
Abstract |
The paper presents the power MOSFET design based on physical parameters. At the first portion of this work, the proposed model of MOSFET structure was designed with group III-V compound. After that the biasing mode was considered for switching stage of that MOSFET. The transition layer for that transistor design was implemented based on that of physical parameters. The numerical analyses are completed before selecting the channel material. The suitable material for channel layer might be oxide materials. According to the parameter selection process, the developed MOSFET structure was established for high power applications. The results confirmed that the analyses on that MOSFET are suitable for real world applications. Keywords - Power MOSFET, Group III-V Compound, Numerical Analyses, Physical Parameters, MATLAB. | |||||||||
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