Publish In |
International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC |
![]() Journal Home Volume Issue |
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Issue |
Volume-7,Issue-6 ( Jun, 2019 ) | |||||||||
Paper Title |
Analysis of Current-Voltage Characteristics and Band-Gap Energy for GaAs-Based MOSFET | |||||||||
Author Name |
Wuthmonekyaw, Tin Tinhla | |||||||||
Affilition |
Department of Electronic Engineering, Mandalay Technological University, Mandalay | |||||||||
Pages |
21-24 | |||||||||
Abstract |
This paper is emphasized on the analysis of computer-based simulation for MOSFET in relation with the currentvoltage characteristics and band structure design. The research is emphasized by gallium arsenide based device with aluminium metal contact. The characteristic curves are highlighted by mathematical equations with MATLAB program. The band-diagram results are approved by the parameters of the materials such as work function, doping concentrations, effective mass of the materials, contact potential and so on. This paper will help the researchers who analyze the characteristics and properties of a metal-oxide semiconductor field effect transistor. Keywords - Band Structure, MOSFET, Gallium Arsenide, Metal, MATLAB. | |||||||||
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