DOIONLINE

DOIONLINE NO - IJEEDC-IRAJ-DOIONLINE-15369

Publish In
International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC
Journal Home
Volume Issue
Issue
Volume-7,Issue-4  ( Apr, 2019 )
Paper Title
Analysis of High N-Conductivity in Ga2o3 Thin Films – The Effect of Surface Electric Field
Author Name
Tamar Tchelidze, Tinatin Tsiskaridze, Bachana Beradze
Affilition
Ivane Javakhishvili Tbilisi State University, Faculty of Exact and Natural Sciences, Tbilisi, Georgia
Pages
1-3
Abstract
High election conductivity obtained in .Ga2O3 thin films is analyzed. By means of thermodynamic analyses a of concentrational equilibrium of native point defect and free charge carriers we showed that it is impossible to obtain high native conductivity in bulk material. Electric filed at the surface is strong enough to provide localization of electrons in near surface region. Electronic states are discrete, which can explain high mobility of carriers observed in experiment. Keywords- oxide semiconductors, compensation of conductivity, surface conductivity
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