DOIONLINE 
DOIONLINE Publish In |
International Journal of Electrical, Electronics and Data Communication (IJEEDC)-IJEEDC |
 Journal Home Volume Issue |
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Issue |
Volume-6,Issue-4 ( Apr, 2018 ) | |||||||||
Paper Title |
Luminescence Lifetime Measurement on Gaas Material for Optoelectronic Devices | |||||||||
Author Name |
Kathy Kyaw Min, Hla Myo Tun, Zaw Min Naing, Win Khaing Moe | |||||||||
Affilition |
Mandalay Technological University, Yangon Technological University, Department of Research and Innovation | |||||||||
Pages |
11-14 | |||||||||
Abstract |
The paper presents the lifetime measurement on GaAs material for optoelectronic devices. The energy dispersion of GaAs is considered for analyzing the material characteristics and Fermi-dirac function for that material for performance evaluation for optoelectronic devices. And then we investigated the energy bandgap of GaAs, Si, and Geas a function of temperature for confirmation. The lifetime measurements for GaAs material with 2.32-2.42eV with 267nm and 400nm wavelength and 2.53-2.63eV with 267nm and 400nm wavelength with time-resolved photoluminescence measurement with the help of MATLAB are analyzed in this paper. The simulation results have been confirmed by the experimental results for measurements. Index terms - Lifetime Measurement, GaAs Material, Optoelectronic Devices, MATLAB, Band Structure Engineering, Fermi-Dirac Function. | |||||||||
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