DOIONLINE 
DOIONLINE Publish In |
International Journal of Advances in Science, Engineering and Technology(IJASEAT)-IJASEAT |
 Journal Home Volume Issue |
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Issue |
Volume-5, Issue-1, Spl. Iss-3 ( Mar, 2017 ) | |||||||||
Paper Title |
The Effects of Sulfurization Pressure on Conversion Efficiency of Cu (In, Ga) (S, Se) Thin Film Solar Cell | |||||||||
Author Name |
Peng-Cheng, Huang, Chia-Chi, Sung | |||||||||
Affilition |
Department of Engineering Science and Ocean Engineering, National Taiwan University | |||||||||
Pages |
14-17 | |||||||||
Abstract |
Cu (In, Ga) (S, Se) (CIGSSe) thin film solar cell have been prepared by sputtering-selenization method with sulfurization process using sulfur powder (without toxic H 2 S gas) in a tube type resistance furnace to form CIGSSe reaction layer. Themorphology of the CIGSSe film becomes smoothly and densely uniform when increasing sulfurization pressure. The sulfur concentration of S/(Se+S) ratio slightly increase from 0.277 to 0.310 with rising the sulfurization pressure value due to the long gas residence time accelerate the reaction rate.A maximum solar cell efficiency of 12.7% was achieved at760 Torr. Keywords: Sulfurization, Sputtering-Selenization, Rapid Thermal Annealing, CIGSSe. | |||||||||
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