DOIONLINE 
DOIONLINE Publish In |
International Journal of Advances in Science, Engineering and Technology(IJASEAT)-IJASEAT |
 Journal Home Volume Issue |
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Issue |
Volume-4,Issue-2, Spl. Iss-2 ( May, 2016 ) | |||||||||
Paper Title |
New Semiconductor Material GAAS+NISB For Nanoelectronics | |||||||||
Author Name |
Sabir Aitchojin, Boris Akanaev, Askar Akanayev | |||||||||
Affilition |
Institute of the Radio engineering and Electronics of the Russian Academy of Sciences (Frjazino departments) Physics and Techniques faculty of Al-Farabi Kazakh National University, Kazakhstan | |||||||||
Pages |
185-188 | |||||||||
Abstract |
Along with a detailed description of the new technology of obtaining new semiconductor material GaAs+NiSb and study of its crystal and physical properties, the possibility of using this material in high power gigahertz electronics, solar energy converters, semiconductor quantum dot lasers is considered. Computer simulations of devices on this material are presented. Index Terms- Bridgman method, GAAS+NISB, Photovoltaics, QD laser, Computer simulations. | |||||||||
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