Publish In |
International Journal of Advances in Science, Engineering and Technology(IJASEAT)-IJASEAT |
Journal Home Volume Issue |
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Issue |
Volume-3, Issue-3, Spl. Iss-2 ( Sep, 2015 ) | |||||||||
Paper Title |
Preparation Of Indium Antimonide And Its Characterization | |||||||||
Author Name |
J.Chidanandappa, K. Eswara Prasad, V. N. Mani | |||||||||
Affilition |
National Remote Sensing Centre, Balanagar, Hyderabad-500037, India Department of Mechanical Engineering, Jawharlal Nehuru Technological University, Hyderabad-500072, India Centre for Materials for Electronics Technology, Hyderabad 500051, India | |||||||||
Pages |
60-61 | |||||||||
Abstract |
The pure indium antimonide (InSb) compound was prepared by employing a directional freezing technique. The pre homogenized InSb sample was used for further synthesis. Required parameters and experimental conditions were optimized. The prepared InSb was processed in 1000 class clean room conditions and loaded in sample tube for further purification process. The sample was subjected to melting and freezing process for fifteen passes- 3cycle and each cycle of 3 hour duration to obtain 4N+ purity level of indium antimonide (InSb) crystalline ingot. The purified sample was characterized for purity and crystalline quality through ICP-OES and XRD techniques respectively and results were discussed. Key words- Indium Antimonide, Directional Freezing , Characterization And Homogenization. | |||||||||
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