DOIONLINE

DOIONLINE NO - IJASEAT-IRAJ-DOIONLINE-16451

Publish In
International Journal of Advances in Science, Engineering and Technology(IJASEAT)-IJASEAT
Journal Home
Volume Issue
Issue
Volume-7,Issue-4  ( Oct, 2019 )
Paper Title
Photoluminescence Study of Carriers Confinement and Thermal Stability of INAS/INP (001) Quantum Dots Emitting Near 1.3 µM
Author Name
Fatiha Bsahraoui, Michel Gendry, Faouzi Saidi
Affilition
Sciences and Technology Institute University center of Tissemsilt Algeria, Nanotechnologies Institute of Lyon (INL) University of Lyon France, Micro-Optoelectronic and Nanostructures Laboratory University of Monastir Tunisia
Pages
47-49
Abstract
Photoluminescence Spectroscopy (PLS) measurements have been performed on self-organized InAs quantum dots (QDs) grown on InP(001) nominal substrate. The lowest full width at half maximum (FWHM) of the PL spectrum measured at low temperature and at high excitation power, indicates the good carrier confinement and low size dispersion of InAs/InP(001) QDs. Through the excitation power-PL measurements with the help of an explicit low, which express the variation of PL intensity with the excitation power, we have evidenced the presence of two families of InAs QDs which have a good carrier confinement and an emission wavelength around 1.3 μm. This result gives the possibility to use this sample in optical telecommunications and in infrared photodetectors sensitive on broad spectral bands. Keywords- Photoluminescence, Quantum dots, Self-organized Growth, Optical Telecommunication.
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