DOIONLINE 
DOIONLINE Publish In |
International Journal of Advances in Science, Engineering and Technology(IJASEAT)-IJASEAT |
 Journal Home Volume Issue |
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Issue |
Volume-6, Issue-3 ( Jul, 2018 ) | |||||||||
Paper Title |
Numerical Simulation of Electronic Transitions in GaAs Step Quantum Well under External Electric Field | |||||||||
Author Name |
Hassen Dakhlaoui | |||||||||
Affilition |
Département de physique, Faculté des Sciences de Bizerte. Université de Carthage. Tunisie | |||||||||
Pages |
1-4 | |||||||||
Abstract |
In this paper, the impact of an external electric field on the three lowest energy levels and the optical absorption in a step GaAs quantum well are investigated through a numerical solution of Schrödinger equation. Using a finite difference method, we have calculated the wave functions and their energy levels and the confining potential. The obtained results show that the inter sub band transition and the optical absorption coefficient can be tuned by varying the intensity of the applied electric field along the hetero structure. The obtained results can be used to fabricate a large variety of photonic devices based on electronic transitions. Keywords - GaAs step Quantum well, inter sub band transitions, optical absorption. | |||||||||
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