DOIONLINE 
DOIONLINE Publish In |
International Journal of Advances in Electronics and Computer Science-IJAECS |
 Journal Home Volume Issue |
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Issue |
Volume-6,Issue-2 ( Feb, 2019 ) | |||||||||
Paper Title |
High Speed-High Sensitive Temperature Sensing Integrated Devices for a Wide Temperature Range Operation using TFET Devices | |||||||||
Author Name |
Akul Madan, Mihir Joshi, Maryam Rahmani, Trond Ytterdal, Maher Rizkalla | |||||||||
Affilition |
Department of Electrical Engineering, Purdue School of Engineering and Technology, Indiana University Purdue University Indianapolis (IUPUI). 723W Michigan Street, Indianapolis, IN 46202 Department of Electronic Systems, Faculty of Information Technology and Electrical Engineering, Norwegian University of Science and Technology | |||||||||
Pages |
17-22 | |||||||||
Abstract |
Semiconducting sensors are becoming increasingly complex particularly with compact and high speed systems. Therefore, it is challenging to monitor temperature change associated with high speed dynamic systems. Design of temperature sensors is always based on the temperature range of sensing; that may target very low temperatures as applied to cryogenics or very high temperatures as applied to heating coil furnaces. Resistive, capacitive, and device based sensors are currently used in NEMS (Nano Electro Mechanical Systems) and MEMS (Micro Electro Mechanical systems) systems. The current CMOS technology however lacks issues related to sensitivity, linearity, reliability, as well as integration within systems. In this work, we propose TFET (Tunneling Field Effect Transistors)based temperature sensors that are superior over the current silicon CMOS technology, featuring high-speed response, low power consumption, and better linearity with accuracy. TFET devices are proposed here for high sensitivity within the range from70 K to near 400 K. A TFET Op Amp. was designed, simulated, and fully characterized for this application. A gain bandwidth product of nearly 360 gain, and 7.4MHzwas estimated with input impedance near infinity within a range of 300MHz, and falls below 1MΩ in the GHz range. The output resistance was found to be 1.6 MΩ. A linear vout/vinslope of360 was observed over an input range of 0 to 1.0V. The TFET Op Amp was analyzed for minimum NF and high stability factor within 2GHz frequency range. As low as 2.4 NF (noise figure) was estimated, and as high as 6.5 stability factor was observed. The input and output impedance matching were determined via ADS (Advanced Design Systems) CAD tools for minimum NF. The highest temperature sensitivity at the optimum sensor design was found to be 3.6 mV/K. The temperature sensor shows higher impact of the reference voltage on the sensitivity at very low temperatures as compared to higher temperatures. The TFET devices used in this approach a reintegrated into an Op. Amp SOC systems. | |||||||||
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